MSG061P03G

MSG061P03G P-Channel Enhancement Mode MOSFET ■ Features • -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V • HBM ESD protection level pass 8KV. • 100% UIS+Rg tested. • Reliable and Rugged. • Lead free and green device available (RoHS compliant). Note: The diode connected between the gate and source serves only as protection ag...