Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
• Compatible between high breakdown
voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half
0.
12+0.
03 -0.
02 6 5 4
Unit: mm
0.
80±0.
05
1.
00±0.
04
0 to 0.
02
• MSG33004 + MSG33001
(0.
35) (0.
35) 1.
00±0.
05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Tr2
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