Transistors
MSG43004
SiGe HBT type
For low-noise RF amplifier
0.
60±0.
05
Unit: mm
■ Features
• Compatible between high breakdown
voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages
3
2
1 1.
00±0.
05
0.
39+0.
01 −0.
03
0.
15±0.
05 0.
05±0.
03 0.
35±0.
01
0.
25±0.
05
0.
50±0.
05
0.
25±0.
05 1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 100 100 125 −55 to +...