■ Main Product Characteristics
VDS RDS(on),typ RDS(on),typ ID
VGS=10V VGS=4.
5V
100V 9.
5mΩ 11.
5mΩ
12A
■ Features
• High speed power switching, logic level • Enhanced body diode dv/dt capability • Enhanced avalanche ruggedness • 100% UIS tested, 100% Rg tested • Lead free, halogen free
■ Application
• Synchronous rectification in SMPS • Hard switching and high speed circuit • DC/DC in telecoms and industrial
MSL120N10G
N-Channel Enhancement Mode
MOSFET
■ Pin Description
2 2
2 2
3 3
1 3
Preliminary
■ Absolute Maximum Ratings (TJ = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Continuous Drain Current (silicon limited)
TC = 25OC TC = 100OC
Drain to Source
Voltage
Gate t...