E2G1053-18-54
¡ Semiconductor MSM56V16800E
¡ Semiconductor
This version: Jul.
1998 MSM56V16800E
2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's
CMOS silicon-gate process technology.
The device operates at 3.
3 V.
The inputs and outputs are LVTTL compatible.
FEATURES
• • • • • • • Silicon gate, quadruple polysilicon
CMOS, 1-transistor memory cell 2-bank ¥ 1,048,576-word ¥ 8-bit configuration 3.
3 V power supply, ± 0.
3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode – CAS latency (1, 2, 3) – Burst le...