¡ Semiconductor MSM5718B70
¡ Semiconductor 18-Megabit RDRAM (2M ¥ 9)
MSM5718B70
E2G1033-17-54
DESCRIPTION
The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely high-speed
CMOS DRAM organized as 2M words by 9 bits.
It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte.
The use of Rambus Signaling Logic (RSL) technology makes transfer rates greater than 500 MHz achievable while using conventional system and board design methodologies.
Lower effective latency is attained by operating the dual 2KByte sense
amplifiers as high speed caches, and by using random access mode to facilitate large block transfers.
RDRAMs are general purpose high-performance memory device...