MSN0350K
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =50A RDS(ON) 11mΩ @ VGS=10V RDS(ON) 16mΩ @ VGS=4.
5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0350K
M...