MSN05B2K
55V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =55V,ID =120A RDS(ON) 5.
5mΩ @ VGS=10V
(Typ:4.
1mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN05B2K
MSN05B2K
T...