MSN06B5K
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =150A RDS(ON) 4.
5mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Lead Free
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN06B5K
MSN06B5K
TO-220-3L
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