MSN10B0K
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 100V,ID =100A RDS(ON) 13mΩ @ VGS=10V
(Typ:9.
9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche
voltage and current
● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN10B0K
MSN10B0...