MSN10B1K

MSN10B1K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =100V,ID =110A RDS(ON) 9mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capa...