MSN15B0K
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =150V,ID =100A RDS(ON) 12mΩ @ VGS=10V
(Typ:9.
8mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device M...