MSN7007F
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =7A RDS(ON) 1.
5 Ω @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transformer
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN7007F
MSN7007F
TO-220F
Reel ...