MSP0330D
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-30V,ID =-30A RDS(ON) 18mΩ @ VGS=-10V RDS(ON) 30mΩ @ VGS=-4.
5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Application
● High side switch for full bridge converter ● DC/DC converter for LCD display
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0330D
MSP0330D
TO-252-2L
Reel Size -
Tape width -
Quantity 2500PCS
Absolute Ma...