MOS-TECH Semiconductor Co.
,LTD
N-Channel Enhancement Mode Field Effect Transistor
MT1803
Features:
VDS=30V
℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.
5mΩ @VGS=10V ≦RDS(ON) 10mΩ @VGS=4.
5V
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
Applications:
Switching Applications.
℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS VGS ID IDM IS PD
TJ, Tstg
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range
℃Tc=25 ℃Tc=25
Thermal Resistance Ratings
Symbol
Parameter
RthJA
M...