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8Mb SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F008B3 MT28F800B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technology (B3): 3.
3V ±0.
3V VCC 3.
3V ±0.
3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.
3µm Smart 3 device • Advanced 0.
18µm
CMOS floating-gate process • Address access time: 90ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence DataSheet4U.
com • TSOP, SOP and ...