MT4600
Dual N & P-Channel Po werTrench®
MOSFET
Features
• N-Channel 30V/5A, RDS (ON) = 28mΩ (max.
) @ VGS =4.
5V RDS (ON) = 38mΩ (max.
) @ VGS =2.
5V
• P-Channel -30V/-4.
6A, RDS (ON) = 63mΩ (max.
) @ VGS =-4.
5V RDS (ON) = 85mΩ (max.
) @ VGS = -2.
5V
General Description
These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low
voltage and battery powered applications where low in-line power loss and fast switching are required.
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