Part Number
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MT47H16M16 |
Manufacturer
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Micron Technology |
Description
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(MT47HxxMx) DDR2 SDRAM |
Published
|
Sep 7, 2007 |
Detailed Description
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com
256Mb: x4, x8, x16 DDR2 SDRAM
DDR2 SDRAM
Features
• • • • • • • • • • • • • • VDD = +1.8V ±0.1V, V...
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Datasheet
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MT47H16M16
|
Overview
com
256Mb: x4, x8, x16 DDR2 SDRAM
DDR2 SDRAM
Features
• • • • • • • • • • • • • • VDD = +1.
8V ±0.
1V, VDDQ = +1.
8V ±0.
1V JEDEC standard 1.
8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 configuration DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Programmable CAS Latency (CL): 3 and 4 Posted CAS additive latency (AL): 0, 1, 2, 3, and 4 WRITE latency = READ latency - 1 tCK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8,192-cycle refresh On-die termination (ODT) Designation
64M4 32M8 16M16
MT47H64M4–16 ...
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