Part Number
|
MT49H8M36 |
Manufacturer
|
Micron Technology |
Description
|
8 Meg x 36 x 8 Banks CIO RLDRAM 2 |
Published
|
Dec 4, 2017 |
Detailed Description
|
CIO RLDRAM 2
MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks
288Mb...
|
Datasheet
|
MT49H8M36
|
Overview
CIO RLDRAM 2
MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks
288Mb: x9, x18, x36 CIO RLDRAM 2 Features
Features
• 533 MHz DDR operation (1.
067 Gb/s/pin data rate) • 38.
4 Gb/s peak bandwidth (x36 at 533 MHz clock
frequency) • Organization
– 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 • 8 internal banks for concurrent operation and maxi-
mum bandwidth • Reduced cycle time (15ns at 533 MHz) • Nonmultiplexed addresses (address multiplexing
option available) • SRAM-type interface • Programmable READ latency (RL), row cycle time,
and burst sequence length • Balanced READ and WRITE latencies in order to
optimize data bus utilization • Data mask for...
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