8Gb: x16, x32 GDDR5 SGRAM Features GDDR5 SGRAM MT51J256M32 – 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks Features • VDD = VDDQ = 1.
5V ±3% and 1.
35V ±3% • Data rate: 6.
0 Gb/s, 7.
0 Gb/s, 8.
0 Gb/s • 16 internal banks • Four bank groups for tCCDL = 3 tCK • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 • Burst length (BL): 8 only • Programmable CAS latency: 7–24 • Programmable WRITE latency: 4–7 • Programmable CRC READ latency: 2–3 • Programmable CRC WRITE latency: 8–14 • Programmable EDC hold pattern for CDR • Precharge: Auto option for each burst access • Auto refresh and self refresh modes • Refresh cycles: 16,384 cycles/32ms • Interf...

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