Part Number
|
MT54W1MH36B |
Manufacturer
|
Micron Technology |
Description
|
SRAM 2-WORD BURST |
Published
|
Mar 8, 2010 |
Detailed Description
|
ADVANCE‡
com 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM
36Mb QDR™II SRAM...
|
Datasheet
|
MT54W1MH36B
|
Overview
ADVANCE‡
com 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.
8V VDD, HSTL, QDRIIb2 SRAM
36Mb QDR™II SRAM 2-WORD BURST
FEATURES
• DLL circuitry for accurate output data placement
MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B
Figure 1 165-Ball FBGA
• Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE operation • Fast clock to valid data times • Full data coherency, providing most current data • Two-tick burst counter for low DDR transaction size • Double data rate operation on read and write ports • Two input clocks (K and K#) for precise DDR timing at clock rising edges only • Two output clocks (C and ...
Similar Datasheet