Part Number
|
MT58L1MY18D |
Manufacturer
|
Micron Technology |
Description
|
(MT58xxxx) 16Mb SYNCBURST SRAM |
Published
|
Jan 4, 2006 |
Detailed Description
|
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM
16Mb SYNCBURST™ SRAM
FEATURES
• Fast clock and OE...
|
Datasheet
|
MT58L1MY18D
|
Overview
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM
16Mb SYNCBURST™ SRAM
FEATURES
• Fast clock and OE# access times • Single +3.
3V ±0.
165Vor 2.
5V ±0.
125V power supply (VDD) • Separate +3.
3V or 2.
5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed WRITE cycle • Burst control (interleaved or linear burst) • Automatic power-down • 100-pin TQFP package • 165-pin FBGA package • Low capacitive bus l...
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