MOS-TECH Semiconductor Co.
,LTD
MT8103
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
VDS= -30V ID= -13A (VGS= -10V)
≦ ΩRDS(ON) 10m @VGS= -10V ≦ ΩRDS(ON) 15.
5m @VGS= -4.
5V
Applications：
▪ Notebook Computer ▪ Portable Battery Pack
Features
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
RoHS Compliant.
℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS VGS ID IDM IS PD
TJ, Tstg
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and St...