CYStech Electronics Corp.
N-Channel Enhancement Mode Power
MOSFET
Spec.
No.
: C442J3 Issued Date : 2009.
03.
02 Revised Date : Page No.
: 1/7
MTA06N03NJ3
Features
BVDSS ID RDS(ON)
25V 80A 6mΩ
• 100% UIS testing, @VD=15V, L=0.
1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package
Symbol
MTA06N03NJ3
Outline
TO-252
G:Gate D:Drain S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note...