CYStech Electronics Corp.
N-Channel Enhancement Mode Power
MOSFET
MTB010N06RI3
Spec.
No.
: C016J3 Issued Date : 2018.
05.
24 Revised Date : Page No.
: 1/ 8
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.
5V, ID=20A
60V 43A 10.
7 mΩ(typ) 16.
9 mΩ(typ)
Symbol
MTB010N06RI3
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB010N06RI3-0-UA-G
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant produc...