CYStech Electronics Corp.
Spec.
No.
: C104H8 Issued Date : 2016.
04.
29 Revised Date : Page No.
: 1/10
P-Channel Enhancement Mode Power
MOSFET
MTB030P06KH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.
5V, ID=-4A
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • RoHS compliant package
RDS(ON)@VGS=-4V, ID=-3A
-60V -34A
-5.
9A 21.
4 mΩ(typ) 35.
6 mΩ(typ) 42.
6 mΩ(typ)
Symbol
MTB030P06KH8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device MTB030P06KH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
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