CYStech Electronics Corp.
Spec.
No.
: C967N3 Issued Date : 2017.
11.
02 Revised Date : Page No.
: 1/ 9
P-Channel Enhancement Mode
MOSFET
MTB040P04N3
BVDSS ID@TA=25C, VGS=-10V RDSON@VGS=-10V, ID=-2.
5A RDSON@VGS=-4.
5V, ID=-2A
-40V -3.
2A 47mΩ (typ.
) 57mΩ (typ.
)
Features
• Advanced trench process technology • Super high density cell design for extremely low on resistance • Reliable and rugged • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB040P04N3
Outline
SOT-23 D
G：Gate S：Source D：Drain
S G
Ordering Information
Device MTB040P04N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / ...