MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB10N40E/D
™ Data Sheet TMOS E-FET.
™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB10N40E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high en...