Three phase full Bridge
with Trench
MOSFETs in DCB isolated high current package
MTI200WX75GD
VDSS = 75 V ID25 = 255 A RDSon typ.
= 1.
1 mW
Part number MTI200WX75GD
T1 G1
S1
T2 G2
S2
L1+ T3
G3
S3
L1 T4
G4
S4
L1-
L2+ T5
G5
S5
L2 T6
G6
S6 L2-
L3+ Surface Mount Device
L3
L3-
Features / Advantages:
•
MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux.
terminals for
MOSFET gate control - terminals for soldering or welding
connections - isolated DCB ceramic base plate
with optimized heat transfer • Space and weight savings • High current capability
Applications:...