CYStech Electronics Corp.
Spec.
No.
: C588C3 Issued Date : 2011.
01.
05 Revised Date : Page No.
: 1/7
ESD protected N-CHANNEL Enhancement Mode
MOSFET
MTN1012ZC3
BVDSS
20V
ID 0.
7A
300mΩ@4.
5V/0.
6A
Description
• Low
voltage drive, 1.
8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package
RDSON(TYP) 340mΩ@2.
5V/0.
5A 420mΩ@1.
8V/0.
4A
Symbol
MTN1012ZC3
Outline
SOT-523 D
G:Gate S:Source D:Drain
GS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
TA=25°C TA=70°C
Pulsed Drain Current
Total Power Dissipation
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
Thermal Resi...