CYStech Electronics Corp.
Spec.
No.
: C743E3 Issued Date : 2009.
10.
08 Revised Date : Page No.
: 1/8
N-Channel Enhancement Mode Power
MOSFET
MTN12N60E3
BVDSS :660V @Tj=150°C RDS(ON) : 0.
65Ω ID : 12A
Description
The MTN12N60E3 is a N-channel enhancement-mode
MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=660V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
Applications
• Ballast • Inverter
Symbol
...