CYStech Electronics Corp.
Spec.
No.
: C095E3 Issued Date : 2016.
03.
18 Revised Date : Page No.
: 1/8
N-Channel Enhancement Mode Power
MOSFET
MTN18N50CE3 BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=9A
500V 18A 211mΩ(typ)
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
Applications
• Power Factor Correction • Flat Panel Power • Full and Half Bridge Power Supplies • Two-Transistor Forward Power Supplies
Symbol
MTN18N50CE3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTN18N50E3-0-UB-X
Package
TO-220 (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton...