CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode
MOSFET
MTN2302N3
Spec.
No.
: C323N3 Issued Date : 2004.
04.
05 Revised Date : 2004.
10.
22 Page No.
: 1/5
.
.
Features
• VDS=20V
RDS(ON)=65mΩ@VGS=4.
5V, IDS=3.
6A
RDS(ON)=95mΩ@VGS=2.
5V, IDS=3.
1A
• Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package
Equivalent Circuit
MTN2302N3
Outline
SOT-23 D
G:Gate S:Source D:Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation
Operating Junction Temperature Storag...