MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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TMOS IV Power Field Effect Transistor
This advanced “E” series of TMOS power
MOSFETs is designed to withstand high energy in the avalanche and commutation modes.
These new energy efficient devices also offer drain–to– source diodes with fast recovery times.
Designed for low
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected
voltage transients.
• Internal Source–to–Drain Diode Des...