CYStech Electronics Corp.
P-Channel Enhancement Mode Power
MOSFET
Spec.
No.
: C733L3 Issued Date : 2012.
02.
14 Revised Date : 2012.
03.
09 Page No.
: 1/8
MTP1406L3
Features
• Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package
BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.
5A RDSON@VGS=-4.
5V, ID=-2A
-60V -4.
8A 75mΩ (typ.
) 74mΩ (typ.
) 99mΩ (typ.
)
Symbol
MTP1406L3
Outline
SOT-223 D
S G：Gate D：Drain S：Source D G
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipatio...