MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP1N80E/D
™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor
Designer's
MTP1N80E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these ...