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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP20N06V/D
™ TMOS V ™
Designer's
Data Sheet
MTP20N06V
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.
080 OHM
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard
MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low
voltage, high speed switching applications in power supplies, converters and ...