CYStech Electronics Corp.
Spec.
No.
: C322N3 Issued Date : 2004.
04.
05 Revised Date :2018.
08.
31 Page No.
: 1/9
20V P-Channel Enhancement Mode
MOSFET
MTP2301N3
BVDSS ID@TA=25°C, VGS=-4.
5V
RDSON(TYP)@VGS=-4.
5V, ID=-2.
8A
RDSON(TYP)@VGS=-2.
5V, ID=-2A
-20V -3.
4A 79mΩ 116mΩ
Features
• Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTP2301N3
Outline
SOT-23 D
G:Gate S:Source D:Drain
S G
Ordering Information
Device MTP2301N3-0-T1-G
Package
Shipping
SOT-23 (Pb-free lead plating and halogen...