CYStech Electronics Corp.
Spec.
No.
: C322S3 Issued Date : 2013.
08.
29 Revised Date : 2018.
10.
17 Page No.
: 1/8
20V P-Channel Enhancement Mode
MOSFET
MTP2301S3
BVDSS ID@TA=25°C, VGS=-4.
5V
RDSON(MAX)@VGS=-4.
5V, ID=-1.
6A
RDSON(MAX)@VGS=-2.
5V, ID=-1A
Features
• Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-323 package • Pb-free lead plating and halogen-free package
-20V -1.
6A 75mΩ(typ.
) 113mΩ(typ.
)
Equivalent Circuit
MTP2301S3
Outline
SOT-323 D
G：Gate S：Source D：Drain
S G
Ordering Information
Device MTP2301S3-0-T1-G
Package
Shipping
SOT-323 (Pb-free lead pla...