MTP2N40E
Designer’s™ Data Sheet TMOS E−FET.
™ Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon Gate
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operati...