| Part Number | MTP4N50E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high... |
| Features |
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Order this document by MTP4N50E/D
MTP4N50E
Motorola Preferred Device
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS(on) = 1.5 OHMS
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –S... |
| File Size | 190.66KB |
| Datasheet |
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MTP4N50E : MTP4N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Capability Specified at Elevated Temperat.