MTP5N40E
Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high
voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain−to−source diode with fast recovery time.
Designed for high
voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperat...