MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon
3 2 1
6 5
4
1
4 5 6
2
3
SOT-363(SC-88)
PNP+PNP
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter
Voltage Collector-Base
Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value -50 -50 -100 Unit Vdc Vdc mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range
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Symbol PD R θJA TJ,Tstg
Max 187 1.
5 670 -55 to +150
Unit mW mW/ C C/W C
1.
FR-4 @ minimum pad 2.
FR-4 @ 1.
0 l 1.
0 inch Pad
l
Device Marking and Resistor Values
Device
MUN5111 MUN...