Freescale Semiconductor Technical Data
Document Number: MWE6IC9080N www.
DataSheet4U.
com Rev.
0, 4/2010
RF LDMOS Wideband Integrated Power
Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz.
This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 29.
0 28.
8 28.
5 PAE (%) 49.
7 51.
6 52.
3
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
865-960 MHz, 80 W CW, 28 V GSM, GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER
AMPLIFIERS
...