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Part Number
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MWS11-GB11-xx |
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Manufacturer
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Microsemi Corporation |
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Description
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InGaP HBT Gain Block |
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Published
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May 9, 2007 |
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Detailed Description
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C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A M I C R O S E M I C O M P A N Y
P REVIEW
Th...
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Datasheet
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MWS11-GB11-xx
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Overview
C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A M I C R O S E M I C O M P A N Y
P REVIEW
This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD).
This RFIC amplifier was designed as an easily cascadable 50 ohm gain block.
The device is self-contained with 50 ohm input and output impedance.
Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz.
This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V).
The same R...
Similar Datasheet