Part Number
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MX043 |
Manufacturer
|
Microsemi |
Description
|
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
May 3, 2005 |
Detailed Description
|
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MX043J MX043G
200 Volts 44 Amps 50 mΩ
...
|
Datasheet
|
MX043
|
Overview
2830 S.
Fairview St.
Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MX043J MX043G
200 Volts 44 Amps 50 mΩ
Features
• • • • • • • • • • • Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with ultrafast body diode low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G) very low thermal resistance rever...
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