Part Number
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MX0912B351Y |
Manufacturer
|
Philips |
Description
|
NPN microwave power transistors |
Published
|
May 3, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B351Y NPN microwave power transistor
Product specification Supersedes data of ...
|
Datasheet
|
MX0912B351Y
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B351Y NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Interdigitated structure; high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input and output matching cell allows an easier design of circuits.
APPLICATIONS Intended for use in common base class C broadband pulse pow...
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