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MX29F200T/B
2M-BIT [256Kx8/128Kx16]
CMOS FLASH MEMORY
FEATURES
• • • • 5.
0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command register architecture - Byte/Word Programming (7us/12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x3) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability.
- Automatically program and verify data at specified address Status Reply - Data polling & Toggle bit for detection of program and erase cycle com...