100V N-ch Power
MOSFET
General Features
Proprietary New Trench Technology RDS(ON),typ.
=5.
3mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode
MXP1007AT
BVDSS 100V
RDS(ON),max.
7.
0mΩ
ID[2] 143
Applications
High efficiency DC/DC Converters Synchronous Rectification
UPS Inverter
Ordering Information
Part Number Package
MXP1007AT
TO-220
Marking MXP1007AT
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain-to-Source
Voltage[1] Gate-to-Source
Voltage Continuous Drain Current[2]
100 ±20
V
143
ID
IDM EAS PD TL TJ & TSTG
Continuous Drain Current[3]
Continuous Drain Current at TC=100℃[2]
Pul...