N0412N
N-CHANNEL
MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0554EJ0100 Rev.
1.
00
Nov 07, 2011
Description
The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 3.
7 mΩ MAX.
(VGS = 10 V, ID = 50 A)
• Low input capacitance Ciss = 5550 pF TYP.
(VDS = 25 V, VGS = 0 V)
• High current ID(DC) = ±100 A
• RoHS Compliant
Ordering Information
Part No.
N0412N-S19-AY ∗1
Lead Plating Pure Sn (Tin)
Packing Tube 50 p/tube
Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
)
Package TO-220 1.
9 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain...